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M2.2: Dislocations in LiF

Dislocations are line defects of a crystal. The creation of new defects and the motion of existing defects are responsible for the palstic deformation of a solid. In this experiment, defects are first created by pressing a pin on a surface of a single crystal of LiF and then their motion is induced by applying a uniaxial shear stress. The position of a dislocation are visulaized by an etching technique. This method is based on the fact that the material abrasion on the sample surface is higher close to a dislocation than in the defect-free regions.